Large time behavior framework for the time-increasing weak solutions of bipolar hydrodynamic model of semiconductors
نویسنده
چکیده
Abstract: In this paper, we consider an isentropic Euler-Poisson equations for the bipolar hydrodynamic model of semiconductor devices, which has a non-flat doping profile and insulating boundary conditions. Using a technical energy method and an entropy dissipation estimate, we present a framework for the large time behavior of time-increasing weak entropy solutions. It is shown that the weak solutions converge to the stationary solutions in L2 norm with exponential decay rate. No regularity and smallness conditions are assumed.
منابع مشابه
Large Time Behavior of Solutions to n-Dimensional Bipolar Hydrodynamic Models for Semiconductors
Abstract. In this paper, we study the n-dimensional (n ≥ 1) bipolar hydrodynamic model for semiconductors in the form of Euler-Poisson equations. In 1-D case, when the difference between the initial electron mass and the initial hole mass is non-zero (switch-on case), the stability of nonlinear diffusion wave has been open for a long time. In order to overcome this difficulty, we ingeniously co...
متن کاملar X iv : 0 81 1 . 37 90 v 1 [ m at h - ph ] 2 4 N ov 2 00 8 Algebraic time - decay for the bipolar quantum hydrodynamic model ∗
The initial value problem is considered in the present paper for bipolar quantum hydrodynamic model for semiconductors (QHD) in R. We prove that the unique strong solution exists globally in time and tends to the asymptotical state with an algebraic rate as t → +∞. And, we show that the global solution of linearized bipolar QHD system decays in time at an algebraic decay rate from both above an...
متن کاملAsymptotic Behavior of Solutions to the Bipolar Hydrodynamic Model of Semiconductors in Bounded Domain
In this paper we present a physically relevant hydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-flat doping profile. For such an Euler-Poisson system, we prove, by means of a technical energy method, that the solutions are unique, exist globally and asymptotically converge to the corresponding stationary solutions. An exponential de...
متن کاملLarge Time Behavior of the Solutions to a Hydrodynamic Model for Semiconductors
We establish the global existence of smooth solutions to the Cauchy problem for the one{dimensional isentropic Euler{Poisson (or hydrodynamic) model for semiconductors for small initial data. In particular we show that, as t ! 1, these solutions converge to the stationary solutions of the drift{diiusion equations. The existence and uniqueness of stationary solutions to the drift-diiusion equati...
متن کاملScattering mechanism of nonmagnetic phase on nano diluted magnetic semiconductors (DMS)
This paper shows the scattering mechanism at diluted magneticsemiconductors. The doped magnetic atom produces a scattering potential due to becoupled of itinerant carrier spin of host material with magnetic momentum of the dopedmagnetic atom. Formulas of scattering event were rewritten by the plane waveexpansion and then the electron mobility of DMS was calculated. Calculations showKondo effect...
متن کامل